MTN2304N3

CYStech Electronics Corp. Spec. No. : C737N3 Issued Date : 2011.11.24 Revised Date : 2014.11.10 Page No. : 1/9 30V N-CHANNEL Enhancement Mode MOSFET MTN2304N3 BVDSS 30V ID@VGS=10V 5A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=5A 20mΩ VGS=4.5V, ID=4A 28mΩ Symbol MTN2304N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2304N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2304N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C737N3 Issued Date : 2011.11.24 Revised Date : 2014.11.10 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) TA=25°C TA=70°C Operating Junction and Storage Temperature Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. Symbol VDS VGS ID IDM PD Tj, Tstg Limits 30 ±20 5 4 20 1.38 0.83 -55~+150 Unit V A W °C T...