CYStech Electronics Corp.
60V N-CHANNEL Enhancement Mode MOSFET
MTN2310M3
Spec. No. : C393M3 Issued Date : 2007.05.28 R...
CYStech Electronics Corp.
60V N-CHANNEL Enhancement Mode
MOSFET
MTN2310M3
Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 1/6
Features
VDS=60V RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A
RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A
Simple drive requirement Small package outline
Symbol
MTN2310M3
Outline
SOT-89
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃
Linear Derating Factor Operating Junction Temperature Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board, t≤10sec.
MTN2310M3
Symbol VDS VGS
ID
IDM PD
Tj Tstg
DG D S
Limits 60 ±20
3.0 2.3 10
1.5
0.01 -55~+150 -55~+150
Unit V V
A A A
W
W/°C °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 2/6
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Note : Surface mounted on FR-4 board, t≦10sec.
Symbol Rth,ja
Limit 83.3
Unit °C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static BVDSS
∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS
*RDS(ON)
*GFS
60 - - V VGS=0, ID=250μA
- 0.05 - V/°C Reference to 25°C, ID=1mA 1.0 - 3.0 V VDS=...
