MTN2310V8

CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTN2310V8 BVDSS ID RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A 60V 14A 31mΩ 35mΩ Description The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Equivalent Circuit MTN2310V8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTN2310V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTN2310V8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Total Power Dissipation TC=25℃ TA=25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 2/9 Limits 60 ±20 14 9 6 4.8 30 *1 14 2.3 ...