MTN2328M3

CYStech Electronics Corp. Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 1/8 N-CHANNEL MOSFET MTN2328M3 BVDSS ID RDSON@VGS=10V, ID=3A RDSON@VGS=4.5V, ID=3A 100V 3A 130mΩ(typ) 136mΩ(typ) Description The MTN2328M3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating package Symbol MTN2328M3 Outline SOT-89 G：Gate S：Source D：Drain GD D S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=100°C Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VDSS VGSS ID ID IDM PD Tj; Tstg Limits 100 ±20 3 1.9 12 *1 2.1 *2 -55~+150 Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper. Unit V V A A A W °C MTN2328M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 2/8 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Note : Surface mounted on 1 in² copper pad of FR-4 board. Symbol Rth,ja Limit 60 Unit °C/W Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* GFS 100 1 - - Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs...