MTN2328N3

CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 1/ 8 100V N-Channel Enhancement Mode MOSFET MTN2328N3 Features VDS=100V RDS(ON)(typ)=125mΩ@VGS=10V, ID=1.5A Low on-resistance Low gate charge Excellent thermal and electrical capabilities Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) 100V 1.9A 125mΩ Equivalent Circuit MTN2328N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2328N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2328N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 2/ 8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 100 ±20 1.9 1.5 10 1.38 0.01 90 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. ...