CYStech Electronics Corp.
Spec. No. : C741H8 Issued Date : 2015.10.15 Revised Date : Page No. : 1/10
N-Channel Enhance...
CYStech Electronics Corp.
Spec. No. : C741H8 Issued Date : 2015.10.15 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power
MOSFET
MTN2510LH8
BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=30A VGS=4.5V, ID=20A
Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and Halogen-free package
100V 45A 8.6A 19.3mΩ 20.5mΩ
Symbol
MTN2510LH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device MTN2510LH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTN2510LH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C741H8 Issued Date : 2015.10.15 Revised Date : Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current @ TC=25°C, VGS=10V (Note 1)
Continuous Drain Current @ TC=100°C, VGS=10V (Note 1)
Continuous Drain Current @ TA=25°C, VGS=10V (Note 2)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 2)
Continuous Drain Current @ TA=85°C, VGS=10V (Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.1mH, ID=20A, VDD=50V (Note 2, 4)
Rep...
