MTN3400N3

CYStech Electronics Corp. 30V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C414N3 Issued Date : 2007.07.05 Revised Date : 2007.12.18 Page No. : 1/ 7 MTN3400N3 Features VDS=30V RDS(ON)=33mΩ@VGS=4.5V, ID=5A www.DataSheet4U.com RDS(ON)=52mΩ@VGS=2.5V, ID=4A Low on-resistance Low gate charge Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Equivalent Circuit MTN3400N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 30 ±12 5.8 4.9 30 1.38 0.01 90 -55~+150 Unit V V A A A W W/°C °C/W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. MTN3400N3 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) GFS IGSS www.DataSheet4U.com IDSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg Source-Drain Diode *VSD *IS *trr *Qrr Min. 30 0.7 Typ. 15 823 99 77 3.3 4.8 26.3 4.1 9.7 1.6 3.1 1.2 16 8.9 M...