MTN3N60J3

CYStech Electronics Corp. Spec. No. : C798J3 Issued Date : 2010.08.12 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN3N60J3 BVDSS : 600V RDS(ON) : 3.6Ω (typ.) ID : 3A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and halogen-free package Applications Adapter Switching Mode Power Supply Symbol MTN3N60J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTN3N60J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN3N60J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C798J3 Issued Date : 2010.08.12 Revised Date : 2013.12.26 Page No. : 2/11 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Sto...