MTN4N60BE3

CYStech Electronics Corp. Spec. No. : C128E3 Issued Date : 2016.03.21 Revised Date : 2017.04.05 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN4N60BE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2.4A 600V 4.0A 1.8Ω Description The MTN4N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Open Framed Power Supply Adapter STB Ordering Information Device MTN4N60BE3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN4N60BE3 CYStek Product Specification Symbol CYStech Electronics Corp. Spec. No. : C128E3 Issued Date : 2016.03.21 Revised Date : 2017.04.05 Page No. : 2/ 10 MTN4N60BE3 Outline TO-220 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @...