CYStech Electronics Corp.
Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/10
N-Channel Enhance...
CYStech Electronics Corp.
Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power
MOSFET
MTN4N60BI3
BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2A
Features
Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
600V 4.0A 1.7Ω
Applications
Open Framed Power Supply Adapter STB
Symbol
MTN4N60BI3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTN4N60BI3-0-UA-G
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
MTN4N60BI3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating...