CYStech Electronics Corp.
Spec. No. : C797F3 Issued Date : 2015.03.06 Revised Date : Page No. : 1/ 11
N-Channel Enhanc...
CYStech Electronics Corp.
Spec. No. : C797F3 Issued Date : 2015.03.06 Revised Date : Page No. : 1/ 11
N-Channel Enhancement Mode Power
MOSFET
MTN4N65F3
BVDSS : 650V RDS(ON) : 3Ω (typ.)
ID : 4A
Features
Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package
Applications
Adapter Switching Mode Power Supply
Symbol
MTN4N65F3
Outline
TO-263
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTN4N65F3-0-T7-S
Package
Shipping
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTN4N65F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C797F3 Issued Date : 2015.03.06 Revised Date : Page No. : 2/ 11
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain c...
