CYStech Electronics Corp.
Spec. No. : C142J3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/11
N-Channel Enhance...
CYStech Electronics Corp.
Spec. No. : C142J3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/11
N-Channel Enhancement Mode Power
MOSFET
MTN5N50BJ3 BVDSS ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2.25A
500V 4.5A 1.1Ω
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Pb-free lead plating and halogen-free package
Symbol
MTN5N50BJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
MTN5N50BJ3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN5N50BJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
Total Power Dissipation (TA=25℃)
(Note 4)
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS VGS ID IDM EAS IAS EA...
