CYStech Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 1/9
MTNN18N03Q8
Description
BVDSS ID RDSON(MAX)
N-CH 1 30V 10A 18mΩ
N-CH 2 60V 0.115A 5Ω
The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and sui.
N-Channel MOSFET
CYStech Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 1/9
MTNN18N03Q8
Description
BVDSS ID RDSON(MAX)
N-CH 1 30V 10A 18mΩ
N-CH 2 60V 0.115A 5Ω
The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Two N-ch MOSFETs in a package • Pb-free lead plating package
Equivalent Circuit
MTNN18N03Q8
Outline
SOP-8
G:Gate S:Source D:Drain
MTNN18N03Q8
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25 °C (Note 1) Continuous Drain Current @ TC=100 °C (Note 1) Pulsed Drain Current (Note 2&3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Symbol VDS VGS ID ID IDM Pd
(Note 4)
Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 2/9
Limits N-CH 1 30 ±20 10 7 40 2 0.016 N-CH 2 60 ±20 0.115 0.08 0.7 0.4 0.016
Unit V V A A A W W / °C
ESD susceptibility
Operating Junction Temperature Storage Temperature
1250
Tj Tstg Rth,ja -55~+150 -55~+150 62.5
V
°C °C °C/W
Thermal.