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MTNN18N03Q8 Datasheet

Part Number MTNN18N03Q8
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description N-Channel MOSFET
Datasheet MTNN18N03Q8 DatasheetMTNN18N03Q8 Datasheet (PDF)

CYStech Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 1/9 MTNN18N03Q8 Description BVDSS ID RDSON(MAX) N-CH 1 30V 10A 18mΩ N-CH 2 60V 0.115A 5Ω The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and sui.

  MTNN18N03Q8   MTNN18N03Q8






N-Channel MOSFET

CYStech Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 1/9 MTNN18N03Q8 Description BVDSS ID RDSON(MAX) N-CH 1 30V 10A 18mΩ N-CH 2 60V 0.115A 5Ω The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Two N-ch MOSFETs in a package • Pb-free lead plating package Equivalent Circuit MTNN18N03Q8 Outline SOP-8 G:Gate S:Source D:Drain MTNN18N03Q8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25 °C (Note 1) Continuous Drain Current @ TC=100 °C (Note 1) Pulsed Drain Current (Note 2&3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Symbol VDS VGS ID ID IDM Pd (Note 4) Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 2/9 Limits N-CH 1 30 ±20 10 7 40 2 0.016 N-CH 2 60 ±20 0.115 0.08 0.7 0.4 0.016 Unit V V A A A W W / °C ESD susceptibility Operating Junction Temperature Storage Temperature 1250 Tj Tstg Rth,ja -55~+150 -55~+150 62.5 V °C °C °C/W Thermal.


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