CYStech Electronics Corp.
Asymmetric Dual N-Channel Enhancement Mode MOSFET
Spec. No. : C558Q8 Issued Date : 2012.04.28...
CYStech Electronics Corp.
Asymmetric Dual N-Channel Enhancement Mode
MOSFET
Spec. No. : C558Q8 Issued Date : 2012.04.28 Revised Date : 2012.04.30 Page No. : 1/12
MTNN8451KQ8
Description
BVDSS ID RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V
FET1 30V 6.8A 15mΩ 23mΩ
FET 2 30V 10.2A 11mΩ 18mΩ
The MTNN8451KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The two
MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode in parallel with the synchronous
MOSFET to boost efficiency further. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package
Equivalent Circuit
MTNN8451KQ8
Outline
SOP-8
G:Gate S:Source D:Drain
MTNN8451KQ8
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Drain-Source Breakdown
Voltage Gate-Source
Voltage Continuous Drain Current
(Note 2)
Spec. No. : C558Q8 Issued Date : 2012.04.28 Revised Date : 2012.04.30 Page No. : 2/12
Symbol BVDSS VGS
Limits FET 1 30 ±20 6.8 5.4 30 1.2 (Note 2) 0.7 (Note 3) -55~+150 FET 2 30 ±20 10.2 8.1 40 2 (Note 2) 1.1 (Note 3)
Unit V
TA=25 °C, VGS=10V TA=70 °C, VGS=10V
ID IDM PD Tj; Tstg
A
Pulsed Drain Current (Note 1) Power Dissipation Operating Junct...