MTP12N10E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Designed to Eliminate the Need for External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM ® D G S CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Single Pulse (tp ≤ 50 µs) Drain Current — Continuous Drain Current — Single Pulse (tp ≤ 10 µs) Tot...