MTP12P10

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12P10/D Power Field Effect Transistor This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature Rugged — SOA is Power Dissipation Limited Source–to–Drain Diode Characterized for Use With Inductive Loads ™ Data Sheet MTP12P10 TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM P–Channel Enhancement–Mode Silicon Gate ® D G S CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–repetitive (tp ≤ 50 µs) Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 100 100 ± 20 ± 40 12 28 75 0.6 – 65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RθJC RθJA TL 1.67 62.5 260 °C/W °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circu...