MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP15N06V
TMOS V Power Field Effect Transisto...
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP15N06V
TMOS V Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard
MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low
voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients.
™ Data Sheet
MTP15N06V
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
TM
D
New Features of TMOS V On–resistance Area Product about One–half that of Standard
MOSFETs with New Low
Voltage, Low RDS(on) Technology Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E–FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source
Voltage Drain–Gate
Voltage (RGS = 1.0 MΩ) Gate–Source
Voltage — Continuous Gate–Source
Voltage — Single Pulse (tp ≤ 50 µs) Dr...