MTP20N06V
Preferred Device
Power MOSFET 20 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand hi...
MTP20N06V
Preferred Device
Power
MOSFET 20 Amps, 60 Volts
N−Channel TO−220
This Power
MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low
voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source
Voltage
Drain−to−Gate
Voltage (RGS = 1.0 MΩ)
Gate−to−Source
Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation Derate above 25°C
VDSS VDGR
VGS VGSM
ID ID IDM PD
60 60
± 20 ± 25 20 13 70
60 0.40
Operating and Storage Temperature Range
TJ, Tstg
−55 to 175
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 20 Apk, L = 1.0 mH, RG = 25 Ω)
Thermal Resistance − Junction to Case − Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
EAS
RθJC RθJA
TL
200
2.5 62.5 260
Unit Vdc Vdc
Vdc Vpk Adc Apk Watts W/°C °C
mJ
°C/W
°C
http://onsemi.com
20 AMPERES 60 VOLTS
RDS(on) = 80 mΩ
N−Channel D
G
S
MARKING D...