MTP2301N3

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET MTP2301N3 BVDSS ID@TA=25°C, VGS=-4.5V RDSON(TYP)@VGS=-4.5V, ID=-2.8A RDSON(TYP)@VGS=-2.5V, ID=-2A -20V -3.4A 79mΩ 116mΩ Features Advanced trench process technology High density cell design for ultra low on resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Pb-free lead plating and halogen-free package Equivalent Circuit MTP2301N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTP2301N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTP2301N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 2/9 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C, VGS=-4.5V Continuous Drain Current @TA=70°C, VGS=-4.5V Pulsed Drain Current Maximum Power Dissipation Ta=25℃ Ta=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -20 ±8 -3.4 -2.7 -10 1.38 (Note) 0.88 (Note) -55~+150 U...