MTP2311V8

CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET Spec. No. : C733V8 Issued Date : 2013.06.24 Revised Date : Page No. : 1/9 MTP2311V8 Description BVDSS ID RDSON@VGS=10V, ID=-3A RDSON@VGS=-4.5V, ID=-2A -60V -11A 63mΩ(typ) 78mΩ(typ) The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTP2311V8 Outline DFN3×3 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTP2311V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTP2311V8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Spec. No. : C733V8 Issued Date : 2013.06.24 Revised Date : Page No. : 2/9 Limits -60 ±20 -11 -7 -4.6 -3.7 -30 *1 14 5.6 2.5 *3 1.6 *3 -55~+150 Unit V A W °C Thermal Data Parameter Thermal Resis...