MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP27N10E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP27N10E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP27N10E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Device Marking: MTP27N10E
D
TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
®
G S CASE 221A–06, Style 5 TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–to–Source
Voltage Drain–to–Gate
Voltage (RGS = 1.0 MΩ) Gate–to–Source
Voltage — Continuous Gate–to–Source
Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Operating and Storage Temperature Range Single ...