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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
TMOS E-FET ....
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP2N50E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients. Robust High
Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
G S Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL
™
Data Sheet
MTP2N50E
Motorola Preferred Device
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
®
D
CASE 221A–06, Style 5 TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source
Voltage Drain–Gate
Voltage (RGS = 1.0 MΩ) Gate–Source
Voltage — Continuous — Non–Repetitive...