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MTP2N60E Datasheet

Part Number MTP2N60E
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET
Datasheet MTP2N60E DatasheetMTP2N60E Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers.

  MTP2N60E   MTP2N60E






Part Number MTP2N60E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power Field Effect Transistor
Datasheet MTP2N60E DatasheetMTP2N60E Datasheet (PDF)

MTP2N60E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltag.

  MTP2N60E   MTP2N60E







TMOS POWER FET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S ™ Data Sheet MTP2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS ® D CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous — Single Pulse (tp ≤ 50 µs) Drain Current — Continuous — Single Pulse (.


2007-11-06 : DM-8884A    DM8884A    C2690A    ABX0027B    ABX0027T    ABX0037T    ABX0235    ABX0237    ABX0238    ABX0239   


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