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MTP2P50EG Datasheet

Part Number MTP2P50EG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MTP2P50EG DatasheetMTP2P50EG Datasheet (PDF)

MTP2P50EG Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters.

  MTP2P50EG   MTP2P50EG






Part Number MTP2P50E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MTP2P50EG DatasheetMTP2P50E Datasheet (PDF)

MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplie.

  MTP2P50EG   MTP2P50EG







Part Number MTP2P50E
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS
Datasheet MTP2P50EG DatasheetMTP2P50E Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2P50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2P50E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy e.

  MTP2P50EG   MTP2P50EG







Power MOSFET

MTP2P50EG Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Features • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • This is a Pb−Free Device* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 500 Vdc 500 Vdc ± 20 Vdc ± 40 Vpk 2.0 Adc 1.6 6.0 Apk 75 W 0.6 W/°C Operating and Storage Temperature .


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