/= T
SGS THOMSON
HD©[^©[i[L[l(gTF^(Q)R!]D©S
MTP3055A MTP3055AFI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
T...
/= T
SGS THOMSON
HD©[^©[i[L[l(gTF^(Q)R!]D©S
MTP3055A MTP3055AFI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
MTP3055A MTP3055AFI
Voss
60 V 60 V
^D S (o n )
0.15 Q 0.15 0
■
*D
12 A 10 A
ULTRA FAST SWITCHING - UP TO > 100KHz LOW DRIVE ENERGY FOR EASY DRIVE
REDUCES SIZE AND COST INTEGRAL SOURCE - DRAIN DIODE
INDUSTRIAL APPLICATIONS: GENERAL PURPOSE SWITCH SERIES REGULATOR
N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast times make these POWER MOS transistors ideal for high speed switching circuit in applications such as po wer actuator driving, motor drive including bru shless motors, robotics, actuators lamp driving, series regulator and many other uses in industrial control applications. They also find use in DC/DC converters and uninterruptible power supplies.
ABSOLUTE MAXIMUM RATINGS
TO-220 ISOWATT220
V DS
Vdgr Vgs
'd m
!g m
Drain-source
voltage (VGS= 0) Drain-gate
voltage (RGS= 20 Kfi) Gate-s...