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MTP3055V Datasheet

Part Number MTP3055V
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet MTP3055V DatasheetMTP3055V Datasheet (PDF)

MTP3055V May 1999 MTP3055V N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.150 Ω .

  MTP3055V   MTP3055V






Part Number MTP3055V
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MTP3055V DatasheetMTP3055V Datasheet (PDF)

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • On−resis.

  MTP3055V   MTP3055V







N-Channel Enhancement Mode Field Effect Transistor

MTP3055V May 1999 MTP3055V N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. ' * ' 6 72 * $EVROXWH 0D[LPXP 5DWLQJV 6\PERO W'66 W*66 D' Bh‡rT‚ˆ…prÃW‚y‡htr 9…hvÃ8ˆ……r‡ Ã8‚‡vˆ‚ˆ†Ã ÃQˆy†rq Q' 9…hvT‚ˆ…prÃW‚y‡htr 6 U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq & 3DUDPHWHU 5DWLQJV % 8QLWV W W 6 ± ! ! "& U‚‡hyÃQ‚r…Ã9v††vƒh‡v‚Ã5ÃU&ÃÃ2Ã!$ 8 ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ9r…h‡rÃhi‚‰rÃ!$ 8 ° #' "! %$ǂà &$ X X 8 ° U-ÃU67* Pƒr…h‡vtÃhqÃT‡‚…htrÃEˆp‡v‚ÃUr€ƒr…h‡ˆ…rÃShtr ° °8 7KHUPDO &KDUDFWHULVWLFV S S θ-& Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚Ã8h†r Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚Ã6€ivr‡ I‚‡rà  " " %!$ °8X °8X θ-$ 3DFNDJH 2XWOLQHV DQG 2UGHULQJ ,QIRUPDWLRQ 'HYLFH 0DUNLQJ HUQ"$$W 'HYLFH 3DFNDJH ,QIRUPDWLRQ Shvy†Uˆir† 4XDQWLW\ #$ȁv‡† HUQ"$$W 9vrÃhqÀhˆshp‡ˆ…vtƂˆ…prƈiwrp‡Ã‡‚Ãpuht.


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