MTP6N60
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP6N60
s s s s s
V DSS 600 V
R DS( on) < 1.2 Ω
ID 6.8...
MTP6N60
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP6N60
s s s s s
V DSS 600 V
R DS( on) < 1.2 Ω
ID 6.8 A
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION
3 1 2
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
s
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Parameter Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 kΩ ) Gate-source
Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 600 ± 20 6.8 4.2 30 125 1 -65 to 150 150
Unit V V V A A A W W/o C
o o
C C
() Pulse width limited by safe operating area
November 1996
1/9
MTP6N60
THERMAL DATA
R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o ...