CYStech Electronics Corp.
Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 1/9
P-Channel Enhancem...
CYStech Electronics Corp.
Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode
MOSFET
MTP8107X8
Features
Low on-resistance Simple drive requirement Advanced trench process technology High density cell design for ultra low on resistance Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDSON(TYP)
VGS=-10V, ID=-3A VGS=-4.5V, ID=-3A
-30V -6.6A -5.3A
19.5mΩ 30mΩ
Equivalent Circuit
MTP8107X8
Outline
DFNWB3×2-8L-D
G:Gate S:Source D:Drain
Pin #1
Pin #1
Ordering Information
Device MTP8107X8-0-T1-G
Package
DFNWB3×2-8L-D (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTP8107X8
CYStek Product Specification
CYSt...