MTP8107X8

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET MTP8107X8 Features Low on-resistance Simple drive requirement Advanced trench process technology High density cell design for ultra low on resistance Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.5V, ID=-3A -30V -6.6A -5.3A 19.5mΩ 30mΩ Equivalent Circuit MTP8107X8 Outline DFNWB3×2-8L-D G：Gate S：Source D：Drain Pin #1 Pin #1 Ordering Information Device MTP8107X8-0-T1-G Package DFNWB3×2-8L-D (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTP8107X8 CYStek Product Specification CYSt...