CYStech Electronics Corp.
Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 1/13
Dual N-Channel En...
CYStech Electronics Corp.
Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 1/13
Dual N-Channel Enhancement Mode
MOSFET
MTS2072G6 BVDSS
Tr1(N-CH) 60V
ID 0.53A(VGS=10V)
RDSON(TYP.)
1.2Ω(VGS=10V) 1.6Ω(VGS=4.5V)
Tr2(N-CH) 30V 5.6A(VGS=10 V) 16.6mΩ(VGS=10V)
24.7mΩ(VGS=4.5V)
Description
The MTS2072G6 consists of two different N-channel enhancement-mode
MOSFETs in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package
Equivalent Circuit
MTS2072G6
Outline
TSOP-6
S2 G2 D1
G：Gate S：Source D：Drain
Pin 1
D2 S1 G1
MTS2072G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C...
