MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW23N25E/D
Designer's
TMOS E-FET .™ Power Field Effect...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW23N25E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www.DataSheet4U.com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
™
Data Sheet
MTW23N25E
Motorola Preferred Device
TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM
®
D
G S
CASE 340K–01, Style 1 TO–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source
Voltage Drain–Gate
Voltage (RGS = 1.0 MΩ) Gate–Source
Voltage — Continuous Gate–Source
Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above ...