isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MTW32N20E
·FEATURES ·With TO-247 packaging ·With low gate drive...
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
MTW32N20E
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
200
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
32 19
128
PD
Total Dissipation
180
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.7
UNIT ℃/W
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isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
MTW32N20E
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
200
V
VGS(th)
Gate Threshold
Voltage
VDS=±30V; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=16A
64
75
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS= ±30V;VDS= 0V
VDS= 200V; VGS= 0V;@Tc=25℃ VDS= 200V; VGS= 0V;Tc=125℃
ISD=32A, VGS = 0V
±0.1 μA
0.25 1.0
mA
2.0
V
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