MTW35N15E

MTW35N15E Preferred Device Power MOSFET 35 Amps, 150 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 150 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 150 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID 35 ID 26.9 IDM 105 Total Power Dissipation Derate above 25°C PD 180 1.45 Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω) EAS 600 Ther...