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MUN5114DW1T1 Datasheet

Part Number MUN5114DW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5114DW1T1 DatasheetMUN5114DW1T1 Datasheet (PDF)

MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into .

  MUN5114DW1T1   MUN5114DW1T1






Part Number MUN5114DW1T1
Manufacturers Motorola
Logo Motorola
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5114DW1T1 DatasheetMUN5114DW1T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN5111DW1T1/D Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individ.

  MUN5114DW1T1   MUN5114DW1T1







Part Number MUN5114DW1T1
Manufacturers LRC
Logo LRC
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5114DW1T1 DatasheetMUN5114DW1T1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single de.

  MUN5114DW1T1   MUN5114DW1T1







Part Number MUN5114DW1T1
Manufacturers ETL
Logo ETL
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors
Datasheet MUN5114DW1T1 DatasheetMUN5114DW1T1 Datasheet (PDF)

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 se.

  MUN5114DW1T1   MUN5114DW1T1







(MUN5111DW1T1 Series) Dual Bias Resistor Transistors

MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com (3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1) • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb−Free Packages are Available 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value Unit SOT−363 CASE 419B STYLE 1 www.DataSheet4U.com −50 Vdc −50 −100 Vdc mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max .


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