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MUN5115DW Datasheet

Part Number MUN5115DW
Manufacturers Weitron Technology
Logo Weitron Technology
Description PNP Transistor
Datasheet MUN5115DW DatasheetMUN5115DW Datasheet (PDF)

MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 3 2 1 6 5 4 1 4 5 6 2 3 SOT-363(SC-88) PNP+PNP M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value -50 -50 -100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range w.

  MUN5115DW   MUN5115DW






Part Number MUN5115DW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5115DW DatasheetMUN5115DW1T1 Datasheet (PDF)

MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into .

  MUN5115DW   MUN5115DW







Part Number MUN5115DW1T1
Manufacturers ETL
Logo ETL
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors
Datasheet MUN5115DW DatasheetMUN5115DW1T1 Datasheet (PDF)

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 se.

  MUN5115DW   MUN5115DW







Part Number MUN5115DW1T1
Manufacturers LRC
Logo LRC
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5115DW DatasheetMUN5115DW1T1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single de.

  MUN5115DW   MUN5115DW







Part Number MUN5115DW1T1
Manufacturers Motorola
Logo Motorola
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5115DW DatasheetMUN5115DW1T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN5111DW1T1/D Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individ.

  MUN5115DW   MUN5115DW







Part Number MUN5115DW1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual PNP Bias Resistor Transistors
Datasheet MUN5115DW DatasheetMUN5115DW1 Datasheet (PDF)

MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrati.

  MUN5115DW   MUN5115DW







PNP Transistor

MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 3 2 1 6 5 4 1 4 5 6 2 3 SOT-363(SC-88) PNP+PNP M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value -50 -50 -100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range www.DataSheet4U.com Symbol PD R θJA TJ,Tstg Max 187 1.5 670 -55 to +150 Unit mW mW/ C C/W C 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad l Device Marking and Resistor Values Device MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 Marking 0A 0B 0C 0D 0E 0F 0G R1(K) 10 22 47 10 10 4.7 1.0 R2(K) 10 22 47 47 8 8 Device MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 Marking 0H 0J 0K 0L 0M 0N 0P R1(K) 2.2 4.7 4.7 22 2.2 100 47 R2(K) 2.2 4.7 47 47 47 100 22 1.0 WE ITR O N http://www.weitron.com.tw MUN5111DW Series Electrical Characteristics (TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=-2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=-10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=-50 V, IE =0) Collector-Emitter Cutoff Current (ICE=-50V, IB =0) Emitter-Base Cutoff Current (VEB=-6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN5111DW MUN5112DW MUN5113DW MUN5114D.


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