Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive
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Silicon Super Fast Recovery Diode
Features High Surge Capability Types from 50 V to 200 V VRRM Not ESD Sensitive
MUR10005CT thru MUR10020CTR
VRRM = 50 V - 200 V IF(AV) = 100 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit
Repetitive peak reverse
voltage
RMS reverse
voltage DC blocking
voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
50
35 50 -55 to 150 -55 to 150
100
70 100 -55 to 150 -55 to 150
200
140 200 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit
Average forward current (per pkg) Peak forward surge current (per leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at rated DC blocking
voltage (per leg)
Maximum reverse recovery time ...