DatasheetsPDF.com

MUR470

Galaxy Semi-Conductor

HIGH EFFICIENCY RECTIFIER

BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER MUR470 --- MUR4100 VOLTAGE RANGE: 700---1000 V CURRENT: 4.0 A FEATURES ...


Galaxy Semi-Conductor

MUR470

File Download Download MUR470 Datasheet


Description
BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER MUR470 --- MUR4100 VOLTAGE RANGE: 700---1000 V CURRENT: 4.0 A FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High crrent capability Easily cleaned with freon, alcohol, lsopropand and similar solvents MECHANICAL DATA Case: JEDEC DO-27, molded plastic Terminals: Axial leads,solderable per MIL-STD- 202 , Method 208 Polarity: Color band denotes cathode Weight: 0.041ounces, 1.15 grams Mounting: Any DO - 27 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. MUR470 MUR480 MUR490 MUR4100 UNITS Maximum recurrent peak reverse voltage VRRM 700 800 900 Maximum RMS voltage VRMS 490 560 630 Maximum DC blocking voltage VDC 700 800 900 Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @TJ=125 Maximum instantaneous forw ard voltage @ 4.0A IFSM VF Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Maximum reverse recovery time (Note1) IR trr Typical junction capacitance (Note2) Typical thermal resistance (Note3) Operating junction temperature range CJ RθJA TJ Storage temperature range TSTG NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)