RECTIFIER. MUR820 Datasheet

MUR820 Datasheet PDF


Part MUR820
Description GLASS PASSIVATED SUPER FAST RECTIFIER
Feature R SEMICONDUCTOR MUR820 THRU MUR860 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 -600.
Manufacture JINAN JINGHENG ELECTRONICS
Datasheet
Download MUR820 Datasheet


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MUR820
R
SEMICONDUCTOR
MUR820 THRU MUR860
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 8.0Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
JF
MUR860
High temperature soldering guaranteed:260°C/10 seconds,
0.25"(6.35mm)from case
Component in accordance to RoHS 2011/65/EU
0.159(4.05)
0.140(3.55)
MECHANICAL DATA
0.053(1.34)
0.047(1.20)
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08ounce, 2.24 gram
TO-220AC
0.410(10.42)
0.388(9.85)
PIN
12
0.161(4.10)
0.147(3.74)
DIA
0.113(2.88)
0.102(2.60)
0.185(4.70)
0.175(4.44)
0.283(7.20)
0.244(6.20)
0.055(1.39)
0.045(1.14)
0.610(15.50)
0.571(14.50)
0.037(0.94)
0.027(0.68)
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.512(13.00)
0.114(2.90)
0.098(2.50)
0.208(5.28)
0.192(4.88)
0.023(0.58)
0.014(0.35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
MUR820
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
TA =25°C
TA =125°C
Maximum Reverse Recovery Time (Note 2)
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
Trr
200
140
200
0.975
Typical thermal resistance (Note 3)
R JC
Operating junction temperature range
Storage temperature range
TJ
TSTG
Notes: 1. Pulse test: 300μs pulse width,1% duty cycle
2. Reverse recovery test conditions IF=0.5A,IR=1.0A, Irr=0.25A
3. Thermal resistance from junction to case
MUR840
400
280
400
8.0
15900.0
1.3
5
500
35
2.5
-55 to+150
-55 to+150
MUR860
600
420
600
1.7
Units
Volts
Volts
Volts
Amps
Amps
Volts
uA
ns
°C/W
°C
°C
JINAN JINGHENG ELECTRONICS CO., LTD.
9-18
HTTP://WWW.JINGHENGGROUP.COM



MUR820
RATINGS AND CHARACTERISTIC CURVES MUR820 THRU MUR860
FIG.1-FORWARD CURRENT DERATING CURVE
12
10
RESISTIVE OR INDUCTVE LOAD
8
6
4
2
0
0 20 40 60 80 100 120
150
LEAD TEMPERATURE (°C)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
180
50
200V
400V
10
600V
PULSE WIDTH=300 S
1% DUTY CYCLE
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.5-TYPICAL JUNCTION CAPACITANCE
400
TJ=25°C
f=1.0MHZ
Vsig=50mVp-p
100
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
105
8.3ms Single Half Sine-Wave
90 (JEDEC Method)
75
60
45
30
15
0
12
5 10 20
NUMBER OF CYCLES AT 60Hz
50
100
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
TJ=100°C
1
TJ=25°C
0.1
0.01
0.001
0
20 40
60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE%
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
10
0.1
1 10
REVERSE VOLTAGE. VOLTS
100
0.1
0.01
0.1 1 10
T, PULSE DURATION ,sec.
100
JINAN JINGHENG ELECTRONICS CO., LTD.
9-19
HTTP://WWW.JINGHENGGROUP.COM






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