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MURA3100G

American First Semiconductor

(MURA305G - MURA3100G) 3.0A Surface Mount High Effciency Rectifiers

Chip Silicon Rectifier MURA305G THRU MURA3100G 3.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features • Bat...


American First Semiconductor

MURA3100G

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Description
Chip Silicon Rectifier MURA305G THRU MURA3100G 3.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Ultrafast recovery time for high efficiency. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments. Suffix "-H" indicates Halogen free parts, ex. MURA305G-H. Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Molded plastic, JEDEC DO-214AB / SMC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight :Approximated 0.19 gram Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current Ambient temperature = 55OC Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 3.0 A IFSM 100 A 5.0 IR μA 300 RθJA CJ 15 OC/W 70 pF TSTG -...




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