Freescale Semiconductor Technical Data
Document Number: MW7IC2750N Rev. 4, 10/2011
RF LDMOS Wideband Integrated Power ...
Freescale Semiconductor Technical Data
Document Number: MW7IC2750N Rev. 4, 10/2011
RF LDMOS Wideband Integrated Power
Amplifiers
The MW7IC2750N wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 -- 2700 MHz. This multi -- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 17% Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — --49 dBc in 1 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 W CW Pout Typical Pout @ 1 dB Compression Point ≃ 50 Watts CW
Driver Applications
PTyoputic=al4WWiMatAtsXAPvegr.,fofr=m2a7n0ce0:MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6146Q0 AmMA,3/I4D,Q42
= 550 mA, Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 11%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --57 dBc in 1 MHz Channel Bandwidth
Features
100% PAR Tested for Guaranteed Output Power Capability...
