Advanced Technical Information
MWI 225-17E9
IGBT Modules Sixpack
NPT3 IGBT
IC80 = 235 A VCES = 1700 V VCE(sat)typ. = ...
Advanced Technical Information
MWI 225-17E9
IGBT Modules Sixpack
NPT3 IGBT
IC80 = 235 A VCES = 1700 V VCE(sat)typ. = 2.5 V
2 46
IGBTs
Symbol VCES VGES IC25 IC80 RBSOA
tSC (SCSOA) Ptot
Symbol
VCE(sat)
VGE(th) I
CES
IGES td(on) tr td(off) t
f
Eon E
off
Cies QGon RthJC
15 28
16 17
29 13 14
20 21 22
11/12
18 19
1
25 26 27
9/10
23 24
3
7/8 5
Conditions
TVJ = 25°C to 125°C
TC = 25°C TC = 80°C RG = 5 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 1200 V; VGE = ±15 V; RG = 5 Ω; TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C
Maximum Ratings
1700
V
± 20 V
335 A 235 A
ICM = 470 VCEK ≤ VCES
10
A µs
1.4 kW
Conditions
Characteristic Values
(T VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 225 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IC = 20 mA; VGE = VCE
V CE
=
V; CES
V GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 900 V; IC = 200 A VGE = ±15 V; RG = 5 Ω
2.5 2.9 V 2.9 3.4 V
4.5 6.5 V
0.6 mA 4.4 mA
500 nA
180 ns 110 ns 500 ns 110 ns
66 mJ 54 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 700 V; VGE = 15 V; IC = 200 A
22 1.72
nF µC
0.085 K/W
E72873
See outline drawing for pin arrangement
Features
€€NPT3 IGBT technology €€low saturation
voltage €€low switching losses €€square RBSOA, no latch up €€high short circuit capability €€positive temperature coefficient for
easy parallelling €€MOS input,
voltage controlled €€ultra fast free wheeling diodes €€solderable pins for PCB mounting €...
