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MWI30-06A7T Datasheet

Part Number MWI30-06A7T
Manufacturers IXYS
Logo IXYS
Description IGBT Module
Datasheet MWI30-06A7T DatasheetMWI30-06A7T Datasheet (PDF)

MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 45 A VCES = 600 V VCE(sat) typ. = 1.9 V Type: MWI 30-06 A7 MWI 30-06 A7T NTC - Option: without NTC with NTC 1 2 3 4 17 59 6 10 7 11 8 12 T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES I GES td(on) tr td(off) tf E on Eoff Cies QGon RthJC Conditions Maximum Ratings TVJ = 25°C to 15.

  MWI30-06A7T   MWI30-06A7T






Part Number MWI30-06A7
Manufacturers IXYS
Logo IXYS
Description IGBT Module
Datasheet MWI30-06A7T DatasheetMWI30-06A7 Datasheet (PDF)

MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 45 A VCES = 600 V VCE(sat) typ. = 1.9 V Type: MWI 30-06 A7 MWI 30-06 A7T NTC - Option: without NTC with NTC 1 2 3 4 17 59 6 10 7 11 8 12 T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES I GES td(on) tr td(off) tf E on Eoff Cies QGon RthJC Conditions Maximum Ratings TVJ = 25°C to 15.

  MWI30-06A7T   MWI30-06A7T







IGBT Module

MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 45 A VCES = 600 V VCE(sat) typ. = 1.9 V Type: MWI 30-06 A7 MWI 30-06 A7T NTC - Option: without NTC with NTC 1 2 3 4 17 59 6 10 7 11 8 12 T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES I GES td(on) tr td(off) tf E on Eoff Cies QGon RthJC Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 45 30 VGE = ±15 V; RG = 33 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 60 VCEK ≤ VCES VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 140 W Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.7 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C V = 0 V; V = ± 20 V CE GE Inductive load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = ±15 V; RG = 33 Ω 1.9 2.4 V 2.2 V 4.5 6.5 V 0.6 mA 0.5 mA 200 nA 50 ns 50 ns 270 ns 40 ns 1.4 mJ 1.0 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 30 A (per IGBT) 1600 150 pF nC 0.88 K/W Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, voltage cont.


2015-10-29 : DA14580    A3503    AH6851    MUBW30-12A6K    MUBW30-12E6K    MUBW45-12T6K    MUBW15-06A7    MUBW20-06A7    MUBW50-06A7    MUBW15-12A7   


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