MWI 300-12 E9
IGBT Modules Sixpack
15 28 16
17
29 13 14
2
20 21 22
11/12
18 19
1
4
25 26 27
9/10
23 24
3
IC80 = 3...
MWI 300-12 E9
IGBT Modules Sixpack
15 28 16
17
29 13 14
2
20 21 22
11/12
18 19
1
4
25 26 27
9/10
23 24
3
IC80 = 375 A VCES = 1200 V VCE(sat) typ. = 2.0 V
6
7/8 E72873
5 See outline drawing for pin arrangement
phase-out
IGBTs Symbol VCES VGES IC25 IC80 RBSOA
tSC (SCSOA) Ptot
Conditions TVJ = 25°C to 125°C
TC = 25°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 3.3 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C
Maximum Ratings
1200
V
± 20 V
530 375
ICM = 750 VCEK < VCES
10
A A A
µs
2.1 kW
Symbol
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 300 A; VGE = 15 V IC = 12 mA; VGE = VCE VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ± 20 V
TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C
Inductive load, TVJ = 125°C VCE = 600 V; IC = 300 A VGE = ±15 V; RG = 3.3 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 300 A
2.0 2.2
4.5
0.4 1
180 100 650 120
19 32
22 2.3
2.4 V 2.7 V
6.5 V
1 mA 12 mA
600 nA
ns ns ns ns mJ mJ
nF µC
0.06 K/W
Features
NPT3 IGBT technology low saturation
voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for
easy parallelling MOS input,
voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
Advantages
...
