MWI 50-12 A7 MWI 50-12 A7T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
Type:
MWI 50-12 A7 MWI 50-12...
MWI 50-12 A7 MWI 50-12 A7T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
Type:
MWI 50-12 A7 MWI 50-12 A7T
NTC - Option:
without NTC with NTC
13
1 2
3 4 17
59 6 10
7 11 8 12
IC25 = 85 A
V CES
= 1200 V
VCE(sat) typ. = 2.2 V
T
16 15 14
NTC
T E72873
See outline drawing for pin arrangement
IGBTs
Symbol VCES VGES IC25 IC80 RBSOA
t SC
(SCSOA) Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Eon Eoff Cies QGon R
thJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200 ± 20
V V
TC = 25°C TC = 80°C
85 60
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH
ICM = 100 VCEK ≤ VCES
V CE
=
V; CES
VGE
=
±15
V;
R G
=
22
Ω;
TVJ
=
125°C
non-repetitive
10
A A A
µs
TC = 25°C
350 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 2 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 22 Ω
2.2 2.7 V 2.5 V
4.5 6.5 V
4 mA 3 mA
200 nA
100 ns 70 ns
500 ns 70 ns 7.6 mJ 5.6 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 50 A
(per IGBT)
3300 230
pF nC
0.35 K/W
Features
● NPT IGBT technology ● low saturation
voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for
easy parallelling ● MOS input, vo...
