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MWI75-12A5 Datasheet

Part Number MWI75-12A5
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description IGBT
Datasheet MWI75-12A5 DatasheetMWI75-12A5 Datasheet (PDF)

MWI 75-12 A5 IGBT Modules Sixpack IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA W1 I 10 K10 A10 B10 R10 S10 F3 K3 P3 E10 F10 A1 M10 N10 V10 W10 E 72873 Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tP = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 Ω, non repetitive VGE = ±15 .

  MWI75-12A5   MWI75-12A5






Part Number MWI75-12A8
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description IGBT
Datasheet MWI75-12A5 DatasheetMWI75-12A8 Datasheet (PDF)

MWI 75-12 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 125 A = 1200 V VCES VCE(sat) typ. = 2.2 V 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 125 85 ICM = 150 VCEK ≤ VCES 10 500 V V.

  MWI75-12A5   MWI75-12A5







IGBT

MWI 75-12 A5 IGBT Modules Sixpack IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA W1 I 10 K10 A10 B10 R10 S10 F3 K3 P3 E10 F10 A1 M10 N10 V10 W10 E 72873 Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tP = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 Ω, non repetitive VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH Maximum Ratings 1200 1200 ±20 ±30 90 60 120 10 ICM = 100 VCEK < VCES 370 150 -40 ... +150 V V V V A A A µs A W °C °C V~ V~ Nm lb.in. mm mm m/s2 g oz. Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q q www.DataSheet4U.com TC = 25°C Advantages q q q space and weight savings reduced protection circuits package designed for wave soldering 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Insulating material: Al2O3 Mounting torque (M5) Creepage distance on surface Strike distance through air Max. allowable acceleration Typical 4000 4800 2.0 - 2.5 18 - 22 9 9 50 80 2.8 .


2010-01-21 : SLA7611M    E3Z-D62    E3Z-T61(A)    E3Z-T66(A)    E3Z-T61(A)-M5J    E3Z-T61(A)-M3J    E3Z-T61(A)-M1J    E3Z-R61    E3Z-R66    E3Z-R61-M5J   


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