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MWS11-GB11-xx

Microsemi Corporation

InGaP HBT Gain Block

C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW  Th...


Microsemi Corporation

MWS11-GB11-xx

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Description
C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW  This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz. This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V). The same RFIC will be available later in an advanced Microsemi Gigamite™ package, with significantly smaller footprint for applications where board space is at a premium.        Advanced InGaP HBT DC to 6GHz Single +5V Supply Small Signal Gain = 16dB P1dB = 19dBm (5V), f=1GHz  SOT-89 3-Pin, & Gigamite Packages W W W . Microsemi . COM         Broadband Gain Blocks  IF or RF buffer Amplifiers  Driver Stage for Power Amps  Final Power Amp for Low to IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Medium Power Applications  Broadband Test Equipment    45 Gain (dB), Pout (dBm), Current (A)00 40 35 30 25 20 15 10 5 0 -5 -1 0 -2 0 -1 5 -1 0 -5 0 5 P in (d B m ) 10 15 P out G a in C u...




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