High Power RF LDMOS FET
MX0525 LDMOS TRANSISTOR
250W, 28V High Power RF LDMOS FETs
Description
The MX0525 is a 250-watt, highly rugged, unmatche...
Description
MX0525 LDMOS TRANSISTOR
250W, 28V High Power RF LDMOS FETs
Description
The MX0525 is a 250-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1 GHz.
Document Number: MX0525 Product Datasheet V1.0
MX0525
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 1200 mA, CW.
Frequency Gp (dB)
P-1dB (W)
D@P-1 (%)
1000 MHz
17
250
60
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 1500 mA, CW.
Freq(MHz) Gain(dB)
P-1(W)
Eff(%)
30 18.9 107 57.5
100 19.3 204 56.5
150 18.6 195 56.6
200 18.5 166 52.5
250 18.9 141 51.5
300 18.8 159 54.5 350 19.1 166 55.6
400 19.1 155 51.7
450 19.4 170 51.0
512 20.6 170 51.7
Typical Performance (In Demo Fixture): Pout= 40 Watts @ 30 MHz-512 MHz, VDD = 28 Volts, IDQ = 1.5 A, Two tone space 100KHz.
Freq(MHz)
30
100 200 300
IMD3(dBc)
-38
-37
-33
-37
400 -39
...
Similar Datasheet