DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B100Y; MZ0912B100Y NPN microwave power transistors
Product specification Super...
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B100Y; MZ0912B100Y NPN microwave power transistors
Product specification Supersedes data of June 1992 1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistors
FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and low thermal resistance Input and output matching cell allows an easier design of circuits. APPLICATIONS Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.
olumns
MX0912B100Y; MZ0912B100Y
PINNING PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1
c b
3 2 Top view 3
e
MAM045
Fig.1 Simplified outline and symbol (SOT439A).
handbook, halfpage
1
c b
3
e
2 Top view
MAM314
Fig.2 Simplified outline and symbol (SOT443A).
QUICK REFERENCE DATA Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband ...