MXD1210

19-0154; Rev 2; 11/05 MXD1210 Nonvolatile RAM Controller General Description The MXD1210 nonvolatile RAM controller is a very lowpower CMOS circuit that converts standard (volatile) CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-of-tolerance) condition. When the power supply begins to fail, the RAM is write-protected, and the device switches to battery-backup mode. Microprocessor Systems Computers Embedded Systems Applications Pin Configurations TOP VIEW VCCO 1 VBATT1 2 TOL 3 GND 4 MXD1210 8 VCCI 7 VBATT2 6 CEO 5 CE DIP/SO Features ♦ Battery Backup ♦ Memory Write Protection ♦ 230µA Operating Mode Quiescent Current ♦ 2nA Backup Mode Quiescent Current ♦ Battery Freshness Seal ♦ Optional Redundant Battery ♦ Low Forward-Voltage Drop on VCC Supply Switch ♦ 5% or 10% Power-Fail Detection Options ♦ Tests Battery Condition During Power-Up ♦ 8-Pin SO Available Ordering Information PART TEMP RANGE PIN-PACKAGE MXD1210C/D 0°C to +70°C Dice* MXD1210CPA 0°C to +70°C 8 PDIP MXD1210CSA 0°C to +70°C 8 SO MXD1210CWE 0°C to +70°C 16 Wide SO MXD1210EPA -40°C to +85°C 8 PDIP MXD1210ESA -40°C to +85°C 8 SO MXD1210EWE -40°C to +85°C 16 Wide SO MXD1210MJA -55°C to +125°C 8 CERDIP *Contact factory for dice specifications. Devices in PDIP and SO packages are available in both leaded and lead-free packaging. Specify lead free by adding the + symbol at the ...