MwT-LN600
26 GHz Super Low Noise pHEMT Device May 2010
FEATURES
0.50 dB Minimum Noise Figure at 12 GHz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB at 12 GHz 0.15 Micron x 600 Micron Gate
APPLICATIONS
Excellent Choice for Super Low Noise Applications Ideal for Commercial, Military, Hi-Rel Space Applications
DESCRIPTION
The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and 600 micron gate width make it ideally suited for applications requ.
26 GHz Super Low Noise pHEMT
MwT-LN600
26 GHz Super Low Noise pHEMT Device May 2010
FEATURES
0.50 dB Minimum Noise Figure at 12 GHz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB at 12 GHz 0.15 Micron x 600 Micron Gate
APPLICATIONS
Excellent Choice for Super Low Noise Applications Ideal for Commercial, Military, Hi-Rel Space Applications
DESCRIPTION
The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and 600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20 GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be screened to meet quality and reliability requirements of space and military applications.
RF SPECIFICATIONS AT Ta = 25 C
S YM BO L
PARAMETERS & CONDITIONS
FREQ UNITS
MIN
TYP
NF min
M inim um Noise Figure V ds= 2.5V Ids = 40 m A (V gs = 0)
4 GHz 12 GHz
dB
0.2 0.5
SSG
Associated Gain V ds= 2.5V Ids = 40 m A (V gs = 0)
4 GHz 12 GHz
dB
11.0 8.0
12.0 9.0
P1dB
Output P ower at 1dB Com pression
V ds= 3.0V Ids = 100 m A
12 GHz
dBm
20.0
Note: MWT-LN600 is a quas i enhanc ement mode dev ic e. For bes t nois e f igure, V gs bias v oltage s hould be s et at
either 0 or s lightly pos itiv e v oltages to ac hiev e the target operating c urrent.
DC SPECIFICATIONS AT Ta = 25 C
S YM BO L Im a x Gm Vp BVGSO BVGDO
PARAMETERS & CONDITIONS M axim um Current Vds = 2.5V Vgs = 0.6V Trans c onduc tanc e Vds = 2.5V.