STN0214
Very high voltage NPN power transistor
Features
■ High gain ■ Very high voltage capability
Applications
■ Hapti...
STN0214
Very high
voltage NPN power transistor
Features
■ High gain ■ Very high
voltage capability
Applications
■ Haptic ■ High
voltage solenoid driving
Description
The device is an NPN power bipolar transistor manufactured using the latest high-
voltage diffused collector technology.
4 3
2 1 SOT-223
Figure 1. Internal schematic diagram
Table 1. Device summary Order code STN0214
Marking N0214
Package SOT-223
February 2012
Doc ID 022769 Rev 1
Packaging Tape and reel
1/7
www.st.com
7
Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES VCEO VEBO
IC ICM IB IBM PTOT Tstg TJ
Collector-emitter
voltage (VBE = 0) Collector-emitter
voltage (IB = 0) Emitter-base
voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-amb (1) Thermal resistance junction-ambient
1. When mounted on PCB area of 1 cm2, t < 10 sec
STN0214
Value 1400 1200
6 200 400 100 200 1.6 -65 to 150 150
Unit V V V mA mA mA mA W
°C
Value 78
Unit °C/W
2/7 Doc ID 022769 Rev 1
STN0214
2 Electrical characteristics
Electrical characteristics
(TCASE = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
ICES IEBO VCEO(sus)(1) VCE(sat) (1)
Collector cut-off current (VBE = 0)
Emitter cut-off current (IB = 0)
Co...